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孔径(Blind hole diameter)：60um 介质厚度（Dielectric thickness）：68um 电镀厚度(Copper surface thickness)：17um 电流密度(Current density)：2.5ASD |
孔径(Blind hole diameter)：86um 介质厚度（Dielectric thickness）：210um 电镀厚度(Copper surface thickness)：20um 电流密度(Current density)：2.5ASD |
1.薄面铜（17-22um镀铜厚度即可完成相关通孔填孔）
Copper etching is unnecessary due to thin copper surface plated(17 to 22um).
2大电流密度可缩短电镀时间，并提高生产效率
High current density will shorten plating time and improve productivity.
3. 副产物低，药水稳定性高，定期进行活性碳处理即可维持长期性能稳定
Low by-product, highly stable bath and long-time stable performance realized by regular activated carbon treatment.
4. 适用于闪镀和无需闪镀流程。
Applicable to flash and no flash process.
5.各添加剂均可CVS分析
Additive agents can be analyzed by CVS.
